Silicon Carbide Single Crystal

Silicon Carbide (SiC) Single Crystal (6H-SiC, 4H-SiC)
Product Silicon Carbide (SiC) Single Crystal (6H-SiC, 4H-SiC)
Part Number SB21

About Silicon Carbide (SiC) Single Crystal

Silicon carbide is a compound formed by C and Si elements. At present, more than 200 kinds of silicon carbide homogeneous and special-shaped crystal structures have been found. Among them, 4H SiC with hexagonal structure has the advantages of high critical breakdown electric field and high electron mobility. It is an excellent semiconductor material for manufacturing semiconductor devices with high voltage, high temperature and anti-irradiation power. It is also the third generation semiconductor material with the best comprehensive performance, the highest degree of commercialization and the most mature technology. Compared with the physical properties of silicon materials, the main characteristics include:

  1. The critical breakdown electric field intensity is nearly 10 times that of silicon materials.
  2. High thermal conductivity, more than 3 times that of silicon material.
  3. The drift velocity of saturated electrons is high, which is twice that of silicon.
  4. Good radiation resistance and chemical stability.
  5. Like silicon materials, silicon dioxide insulating layer can be directly grown on the surface by thermal oxidation process.

Growth Method

At present, the most mature method for growing silicon carbide single crystal is physical vapor transport (PVT). Its growth mechanism is that carbon powder and silicon powder are sublimated and decomposed into gaseous substances such as Si atoms, Si2C molecules, and SiC2 molecules at a high temperature of more than 2000°C. Driven by the temperature gradient, these gaseous substances will be transported to the silicon carbide seed crystal with lower temperature to form 4H silicon carbide crystal. Specific 4H SiC crystal forms can be grown by controlling the process parameters such as temperature field and gas flow of PVT.

NCE supplies high quality Silicon Carbide (SiC) Single Crystal (6H-SiC, 4H-SiC). Please contact us for more details. Get a Quote Now! For other semiconductor materials, please check our Semiconductor Materials category page.

Typical Specification – Silicon Carbide (SiC) Single Crystal

Growth Method PVT
Crystal Structure hexagonal
Lattice constant a=3.08 Å, c=15.08 Å
Hardness 9.2(mohs)
Thermal conductivity @ 300 K 5 W/(cm·K)
Stacking Sequence ABCACB
Band Gap 2.93 eV (indirect)
Dielectric constants e(11)=e(22)=9.66, e(33)=10.33
Typical Sizes 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm
Diameter 2”
Typical Thickness 0.5 mm, 1.0 mm
Polishing Single or double
Crystal orientation Growth axis or 3.5º off <0001>
Redirection the edge:
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å (5 µm × 5 µm)

Order Information

Inquiries and orders should include the following information:

  1. Quantity
  2. Dimensions
  3. Other specifications, if possible

Packing and Storage

Standard Packing: 100 pcs in clean sealed bags. Special package is available on request.

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