Pyrolytic Boron Nitride VGF Crucible

Compound semiconductor single crystal needs ultrapure container. Pyrolytic boron nitride crucible is the most ideal container for compound semiconductor single crystal growth. At present, the most popular methods for the growth of compound semiconductor single crystals are the liquid sealed Czochralski method (LEC) and the vertical gradient cooling method (VGF). The PBN Crucibles include the LEC crucible, the VGF crucible and so on.

VGF is the main technology for GaAs and InP compound semiconductor single crystal growth in the world. The PBN VGF crucible is the ideal vessel for single crystal growth by VGF.

Pyrolytic Boron Nitride (PBN) Typical Applications:

Crucibles and bases for synthesis of semiconductor single crystal and III-V compounds
LEC series crucible for in situ synthesis of GaAs, InP and gap single crystals
MBE series crucible for molecular beam extension
Crucibles, VGF series
PBN/PG composite heater coating
Graphite heater insulation coating
High temperature insulating fluid nozzle
MOCVD insulation board
Special shaped crucibles and special shaped graphite coating
Composite heaters for wafer annealing process

Features of the PBN LEC Crucible:

High Purity (99.99%)
No wetting with melt metal
Thermal conductivity controllable, improve the rate of yield
Excellent thermal shock resistance
Easy cleaning and reusability
Inert, no reaction with acid and alkali

NCE can provide the Pyrolytic Boron Nitride (PBN) VGF Crucible as required. Various sizes can be customized. Please contact us for more details. Get a Quote Now! For other ceramic materials, please check our Ceramics catalog page.

* This form is for typical sizes, other sizes are customizable.

Inquiries and orders should include the following information:

1. Quantity
2. Dimensions or drawings

Standard Packing: Sealed bags in carton boxes. Special package is available on request.