Hot-Pressed Aluminum Nitride

Aluminum nitride (AlN) ceramics, with excellent comprehensive properties, is a new generation of advanced ceramics that has attracted extensive attention in recent years, and has a wide range of application prospects in many aspects.

Aluminum nitride is very suitable for semiconductor substrates and structural packaging materials. The application potential in the electronic industry is very great. In addition, it is resistant to high temperature and corrosion, and is not infiltrated by a variety of molten metals and molten salts. Therefore, it can be used as advanced refractory materials and crucible materials as well as anti-corrosion coatings, such as the liners of containers and processors for corrosive substances. The powder can also be added to various metals or nonmetals as additives to improve the performance of these materials. The high-purity aluminum nitride ceramics are transparent and can be used as electronic optical devices. It also has excellent wear resistance and can be used as abrasive materials and wear-resistant parts.

Hot pressed aluminum nitride ceramic, purity 99.5%. Thermal conductivity can be from 140 W/(m·k) to 210 W/(m·k).

Hot pressed aluminum nitride ceramics are sintered by vacuum hot pressing.

The aluminum nitride ceramic product density after hot pressing reaches 3.3 g/cm³, without any sintering additives, and the strength and hardness of the product after high temperature and high pressure are better than those of the tape casting process and dry pressing method.

Hot pressed aluminum nitride ceramics have high temperature resistance and corrosion resistance, and will not be eroded by various molten metals and molten hydrochloric acid.

Hot pressed aluminum nitride ceramic has excellent thermal conductivity and high electrical insulation.

NCE can provide Hot Pressed Aluminum Nitride (AlN) as required. Various sizes can be customized. Please contact us for the RFQ.

Typical Application of Aluminum Nitride (AlN):

• Cooling cover and magnetic resonance imaging equipment
• As the substrate of high-frequency surface acoustic wave device, large-size and high-power heat dissipation insulating substrate
• Electrostatic chuck and heating disk for semiconductor and integrated circuit
• Infrared and microwave window materials
• Crucible for compound semiconductor single crystal growth
• Target of high-purity aluminum nitride film

Features:

• High thermal conductivity
• Expansion coefficient can match with semiconductor silicon chips
• High insulation resistance and voltage withstand strength
• Low dielectric constant and low dielectric loss
• High mechanical strength
• Suitable for tap-casting molding process

Length 365 x width 355 x height < 350 mm

Outer diameter 335 x height < 385 mm

Inquiries and orders should include the following information:

1. Dimensions or drawings
2. Quantity

Standard Packing: Sealed bags in carton boxes. Special package is available on request.