High-Purity Silicon Carbide Powder

High-purity silicon carbide (SiC) powder is synthesized with high-purity silicon powder and high-purity carbon powder by high-temperature solid-state reaction method. Its purity can reach 99.999% wt. The content of nitrogen, boron, aluminum, and other impurities is very low, which can be used to improve the semi-insulating properties of high purity semi-insulating silicon carbide.

The purity of semiconductor high-purity silicon carbide powder can reach 99.999%, which is a raw material for silicon carbide semiconductor single crystal. Different from other products on the market, its most notable feature is high-speed crystal growth. The crystal growth rate can reach 0.2-0.3 mm/h, which shortens the crystal growth time of silicon carbide and greatly reduces the crystal growth cost.

NCE is specialized in supplying high-purity level of SiC powder in different purity levels of 99.99%, 99.995% and 99.999%. Please contact us for more details. Get a Quote Now! For other semiconductor materials, please check our Semiconductor Materials catalog page.

Typical Applications:

Improvement of semi-insulating property in growth of high-purity semi-insulating silicon carbide in the semiconductor industries.

Inquiries and orders should include the following information:

1. Quantity
2. Purity level (99.99%, 99.995%, or 99.999%)

Standard Packing: NCE standard packing.