Pyrolytic Boron Nitride LEC Crucible

Compound semiconductor single crystal needs ultrapure container. Pyrolytic boron nitride crucible is the most ideal container for compound semiconductor single crystal growth. At present, the most popular methods for the growth of compound semiconductor single crystals are the liquid sealed Czochralski method (LEC) and the vertical gradient cooling method (VGF). The PBN Crucibles include LEC crucibles, VGF crucibles and so on.

Liquid Encapsulation Czochralski (LEC) is a method of using the liquid covering agent to seal the melt and control the volatilization to realize crystal growth. LEC Crucible is applied as vessel of crystal growth in LEC.

Pyrolytic Boron Nitride (PBN) Typical Applications:

Crucibles and bases for synthesis of semiconductor single crystal and III-V compounds
LEC series crucible for in situ synthesis of GaAs, InP and gap single crystals
MBE series crucible for molecular beam extension
Crucibles, VGF series
PBN/PG composite heater coating
Graphite heater insulation coating
High temperature insulating fluid nozzle
MOCVD insulation board
Special shaped crucibles and special shaped graphite coating
Composite heaters for wafer annealing process

Features of the PBN LEC Crucible:

High Purity (99.99%)
No wetting with melt metal
Thermal conductivity controllable, improve the rate of yield
Excellent thermal shock resistance
Easy cleaning and reusability
Inert, no reaction with acid and alkali

NCE can provide the Pyrolytic Boron Nitride (PBN) LEC Crucible as required. Various sizes can be customized. Please contact us for more details. Get a Quote Now! For other ceramic materials, please check our Ceramics catalog page.

* This form is for typical sizes, other sizes are customizable.

Inquiries and orders should include the following information:

1. Quantity
2. Dimensions or drawings

Standard Packing: Sealed bags in carton boxes. Special package is available on request.